Excellent Electrical Properties of n-ZnO Nanowire/p-B-doped Diamond Heterojunction

 The high-temperature carrier electrical transport behaviour of n-ZnO nanowires (NWs)/p-diamond heterojunctions is investigated in this study. With a low turn on voltage, the rectifying action was seen (0.8 V). The forward current of the n-ZnO nanorods (NRs)/p-BDD heterojunction is 12

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Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction: A Review

 This review focuses on the optoelectronic properties of diamond-based one-dimensional metal-oxide heterojunctions. We begin by briefly describing the current state of research on one-dimensional (1D) metal-oxide heterojunctions and the characteristics of the p-type boron-doped diamond (BDD) film; we then go

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