Excellent Electrical Properties of n-ZnO Nanowire/p-B-doped Diamond Heterojunction
The high-temperature carrier electrical transport behaviour of n-ZnO nanowires (NWs)/p-diamond heterojunctions is investigated in this study. With a low turn on voltage, the rectifying action was seen (0.8 V). The forward current of the n-ZnO nanorods (NRs)/p-BDD heterojunction is 12
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