Study of GaAs-Based Dilute Nitride Materials Grown by Liquid Phase Epitaxy
This study discusses the creation and characterisation of monocrystalline dilute nitride InGaAs(Sb)N and GaAsSbN layers using liquid phase epitaxy (LPE) in the context of solar applications. The low-temperature form of the LPE method is utilised to create high-quality epitaxial layers
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